2SD2081 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 2.0max V °C fT VCE=12V, IE=–0.5A 60typ MHz °C COB VCB=10V, f=1MHz 95typ pF 150 Tstg –55 to +150 3.9 1 PC 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V IB Tj 10.1±0.2 4.0±0.2 V Unit 0.8±0.2 Unit 120 Ratings ±0.2 Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions 8.4±0.2 ■Electrical Characteristics Symbol (2kΩ) (200Ω) E Application : Driver for Solenoid, Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I B =0.5mA 0 0 1 2 3 4 5 1A 2 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) 20000 10000 DC Cur rent Gain h F E Typ 5000 1000 500 100 1 5 5000 12 5˚C 25 1000 Transient Thermal Resistance 10000 0.5 500 ˚C –3 0˚C 100 50 30 0.03 10 0.1 Collector Current I C (A) 0.5 p) 2 3 1 5 10 5 1 0.5 0.2 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) p) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 30 30 10 100 DC si nk 0.1 at 20 he Without Heatsink Natural Cooling ite 1 0.5 20 fin 40 s In 60 5 s ith 80 m W Collector Curre nt I C (A) 10 1m Maximu m Power Dissipa tion P C (W) Typ Cut- off Fr equ ency f T ( MH Z ) DC Cur rent Gain h F E 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 30 0.03 4 ase Tem 5A 1 ase Tem 5 I C =10A 25˚C (C 0. 7m A 6 –30˚C (C 1mA 2 mp) 10 8 e Te 2m A (Cas Collector Current I C (A) 3mA (V C E =4V) 10 125˚C 5mA θ j - a ( ˚C/W) A m 50 1 A 0m I C – V BE Temperature Characteristics (Typical) 3 Collector Current I C (A) I C – V CE Characteristics (Typical) 15 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –5 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 145