SavantIC Semiconductor Product Specification 2SC1875 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A ICM Collector current-peak 10 A IB Base current 1.0 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2SC1875 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.2 V ICES Collector cut-off current VCE=1500V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE-1 DC current gain IC=0.5A ; VCE=10V 10 35 hFE-2 DC current gain IC=2A ; VCE=10V 5 25 ts Storage time tf Fall time CONDITIONS MIN TYP. MAX 500 UNIT V 10 µs 1.0 µs IC=2.5A ; IB1=-IB2=0.6A Pw=20µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC1875