SAVANTIC 2SD1063

SavantIC Semiconductor
Product Specification
2SD1063
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Low collector saturation voltage
·Complement to type 2SB827
APPLICATIONS
·Universal high current switching as solenoid
driving,high speed inverter and converter.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
7
A
ICM
Collector current -peak
14
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1063
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=>
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=4A; IB=0.4A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=5A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.20
µs
0.90
µs
0.30
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=2.0A; IB1=-IB2=0.2A
VCC=20V;RL=10E
Fall time
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD1063
SavantIC Semiconductor
Product Specification
2SD1063
Silicon NPN Power Transistors
4