SAVANTIC KSC5027

SavantIC Semiconductor
Product Specification
KSC5027
Silicon NPN Power Transistors
·Wit
DESCRIPTION
With TO-220C package
·High voltage and high reliability
·High speed switching
·Wide area of safe operation
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
10
A
IB
Base current
1.5
A
PC
Collector dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
KSC5027
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
1100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A ;IB=0.3A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.2A ; VCE=5V
10
hFE-2
DC current gain
IC=1A ; VCE=5V
8
Transition frequency
IC=0.2A ; VCE=10V
15
MHz
Collector output capacitance
f=1MHz ; VCB=10V
60
pF
fT
Cob
CONDITIONS
MIN
TYP.
MAX
UNIT
40
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5 IB1=-2.5IB2=2A
VCC=400V
RL=200@
hFE-1 Classifications
N
R
O
10-20
15-30
20-40
2
0.5
µs
3.0
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
KSC5027
SavantIC Semiconductor
Product Specification
KSC5027
Silicon NPN Power Transistors
4