SAVANTIC 2SD1061

SavantIC Semiconductor
Product Specification
2SD1061
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Wide ASO(safe operating area)
·Complement to type 2SB825
APPLICATIONS
·Universal high current switching as
solenoid driving,
·High speed inverter and converter.
relay drivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
7
A
ICP
Collector current-peak
12
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1061
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE==
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=4A, IB=0.4A
0.4
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=5A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.2
µs
0.9
µs
0.3
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A IB1=- IB2=0.2A
VCC=20V;RL=10D
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1061
SavantIC Semiconductor
Product Specification
2SD1061
Silicon NPN Power Transistors
4