SavantIC Semiconductor Product Specification 2SD1265 2SD1265A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1265 VCBO Collector-base voltage 60 Open base 2SD1265A VEBO Emitter-base voltage IC V 80 2SD1265 Collector-emitter voltage UNIT 60 Open emitter 2SD1265A VCEO VALUE V 80 Open collector 8 V Collector current (DC) 4 A ICM Collector current-peak 6 A IB Base current 1 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1265 2SD1265A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat PARAMETER Collector-emitter sustaining voltage CONDITIONS 2SD1265 MIN TYP. MAX UNIT 60 V IC=0.2A , L=25mH 80 2SD1265A Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=3V 1.2 V ICBO Collector cut-off current VCB=20V; IE=0 30 µA IEBO Emitter cut-off current VEB=8V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=3V 40 hFE-2 DC current gain IC=1A ; VCE=3V 30 hFE-2 Classifications Q P O 30-60 500-100 80-160 2 160 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3