SAVANTIC 2SD1985

SavantIC Semiconductor
Product Specification
2SD1985 2SD1985A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio hFE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB1393 /1393A
APPLICATIONS
·For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SD1985
VCBO
Collector-base voltage
60
Open base
2SD1985A
VEBO
Emitter-base voltage
IC
V
80
2SD1985
Collector-emitter voltage
UNIT
60
Open emitter
2SD1985A
VCEO
VALUE
V
80
Open collector
6
V
Collector current (DC)
3
A
ICM
Collector current-peak
5
A
PC
Collector power dissipation
TC=25
25
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1985 2SD1985A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SD1985
MIN
TYP.
MAX
UNIT
60
V
IC=30mA , IB=0
80
2SD1985A
Collector-emitter saturation voltage
IC=3A;IB=0.375A
1.2
V
VBE
Base-emitter voltage
VCE=4V;IC=3A
1.8
V
ICES
Collector
cut-off current
200
µA
300
µA
1
mA
ICEO
Collector
cut-off current
2SD1985
VCE=60V;IB=0
2SD1985A
VCE=80V;IB=0
2SD1985
VCE=30V;IB=0
2SD1985A
VCE=60V;IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
70
hFE-2
DC current gain
IC=3A ; VCE=4V
10
Transition frequency
IC=0.5A; VCE=5V;f=10MHz
fT
250
30
MHz
0.5
µs
2.5
µs
0.4
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;IB1=0.1A
IB2=-0.1A;VCC=50V
hFE-1 Classifications
Q
P
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1985 2SD1985A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
2SD1985 2SD1985A
Silicon NPN Power Transistors
4