SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1266 VCBO 60 Open base 2SD1266A VEBO Emitter-base voltage V 80 2SD1266 Collector-emitter voltage UNIT 60 Open emitter Collector-base voltage 2SD1266A VCEO VALUE V 80 Open collector 6 V IC Collector current 3 A ICM Collector current-peak 5 A PC Collector power dissipation Ta=25 2 TC=25 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SD1266 MIN TYP. MAX UNIT 60 IC=30mA ,IB=0 V 80 2SD1266A Collector-emitter saturation voltage IC=3A, IB=0.375A 1.2 V VBE Base-emitter voltage IC=3A ; VCE=4V 1.8 V IEBO Emitter cut-off current VEB=6V; IC=0 1 mA ICEO Collector cut-off current 0.3 mA 0.2 mA ICES Collector cut-off current 2SD1266 VCE=30V; IB=0 2SD1266A VCE=60V; IB=0 2SD1266 VCE=60V; VBE=0 2SD1266A VCE=80V; VBE=0 hFE-1 DC current gain IC=1A ; VCE=4V 70 hFE-2 DC current gain IC=3A ; VCE=4V 10 Transition frequency IC=0.5A; VCE=10V,f=10MHz fT 250 30 MHz 0.5 µs 2.5 µs 0.4 µs Switching times ton Turn-on time tstg Storage time tf IC=1A IB1=0.1A ,IB2=-0.1A VCC=50V, Fall time hFE-1 Classifications Q P 70-150 120-250 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors 4