SavantIC Semiconductor Product Specification BUX84 BUX85 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High switching speed APPLICATIONS ·Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BUX84 VCBO Collector-base voltage 400 Open base BUX85 VEBO Emitter-base voltage V 1000 BUX84 Collector-emitter voltage UNIT 800 Open emitter BUX85 VCEO VALUE V 450 Open collector 10 V IC Collector current 2 A ICM Collector current-peak 3 A IB Base current 0.75 A IBM Base current-peak 1 A Ptot Total power dissipation 40 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting flange MAX UNIT 2.5 K/W SavantIC Semiconductor Product Specification BUX84 BUX85 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS BUX84 MIN TYP. MAX UNIT 400 V IC=100mA ; IB=0;L=25mH 450 BUX85 VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A 3.0 V Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V BUX84 VCES=800V; VBE=0 Tj=125 1.0 1.5 BUX85 VCES=1000V; VBE=0 Tj=125 0.2 1.5 1.0 VBEsat ICES Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 15 Transition frequency IC=0.2A ;VCE=10V;f=1.0MHz fT mA mA 100 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 0.5 µs 2 3.5 µs 0.4 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 BUX84 BUX85