SavantIC Semiconductor Product Specification BUT56AF Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation 50 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BUT56AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=100mA ;LC=125mH V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V ICES Collector cut-off current VCE=1000V; VBE=0 Tj=150 1.0 2.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=2V 4 Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz VCEsat fT CONDITIONS MIN TYP. MAX UNIT 450 V 6 V 45 10 MHz Switching times toff Turn-off time tf Fall time IC=4A ;IB1=-IB2=1.25A tp=20µs 2 4 µs 1 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15mm) 3 BUT56AF