SavantIC Semiconductor Product Specification MJE371 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary symmetry circuity PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -4 V IC Collector current (DC) -4 A ICM Collector current-Peak -8 A IB Base current (DC) -2 A PD Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 3.12 /W SavantIC Semiconductor Product Specification MJE371 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.5 V VBE(sat) Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-1V -1.2 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 µA hFE DC current gain IC=-1A ; VCE=-1V 2 MIN TYP. MAX -40 40 UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJE371