ISC BD190

Inchange Semiconductor
Product Specification
BD190
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・High current
・Complement to type BD189
APPLICATIONS
・For use in 5 to 10 watt audio amplifiers
utilizing complementary or quasi
complementary circuits.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter -base voltage
Open collector
-5
V
IC
Collector current (DC)
-4
A
IB
Base current
-2
A
Pt
Total power dissipation
40
W
Tj
Junction temperature
-65~150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
3.12
℃/W
Tmb≤70℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance, junction to case
Inchange Semiconductor
Product Specification
BD190
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(SUS)CEO
Collector-emitter sustaining voltage
IC=-0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
-1.0
V
VBE
Base-emitter on voltage
IC=-2A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-70V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
40
hFE-2
DC current gain
IC=-2A ; VCE=-2V
15
Transition frequency
IC=-1.0A; VCE=-10V ;f=1.0MHz
2.0
fT
2
-60
UNIT
V
MHz
Inchange Semiconductor
Product Specification
BD190
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3