2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain L 3 3 Collector C B Top View 3 1 1 K 2 2 E 2 Emitter D 1 MARKING R F Base G REF. = hFE Coding A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 20 12 3 0.1 200 150, -55~150 V V V A mW °C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature ELECTRICAL CHARACTERISTICS Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance (TA = 25°C unless otherwise noted) Symbol Min. Typ. Max. Unit BVCBO BVCEO ICBO IEBO hFE* fT NF 20 12 - - - V V μA μA 50 - 7 - 1 1 250 2 GHz dB Test Conditions IC=10μA, IE=0 IC= 1mA, IB=0 VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC= 20mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz *pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2% CLASSIFICATION OF hFE http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Rank Q R S Coding Range Marking 23 50 - 100 R23 24 80 - 160 R24 25 125 – 250 R25 Any changes of specification will not be informed individually. Page 1 of 2 2SC3356F Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Any changes of specification will not be informed individually. Page 2 of 2