SECOS MMBTH10

MMBTH10
50 mA, 30 V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen and lead free
SOT-23
DESCRIPTION
The MMBTH10 is designed for use in VHF & UHF oscillators
and VHF mixer in tuner of a TV receiver.
A
L
3
3
FEATURES
Collector
3
VHF/UHF Transistor
C B
Top View
1
1
K
2
E
2
1
D
Base
PACKAGING INFORMATION
F
Weight: 0.0078g (Approximately)
2
REF.
Emitter
A
B
C
D
E
F
MARKING CODE
3EM
H
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector Power Dissipation
PC
225
mW
Collector Current - Continuous
IC
50
mA
Emitter - Base Voltage
VEBO
3
V
Collector - Emitter Voltage
VCEO
25
V
Collector - Base Voltage
Junction, Storage Temperature
VCBO
30
V
TJ, TSTG
+150, -55 ~ +150
ā„ƒ
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Collector - Base Breakdown Voltage
Parameter
V(BR)CBO
30
-
-
V
IC=100uA, IE=0
Collector - Emitter Breakdown Voltage
V(BR)CEO
25
-
-
V
IC=1mA, IB=0
Emitter - Base Breakdown Voltage
V(BR)EBO
3
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=25V, IE=0
VEB=2V, IC=0
Collector Cut - Off Current
Emitter Cut - Off Current
Test Conditions
IEBO
-
-
100
nA
VCE(sat)
-
-
500
mV
IC=4mA, IB=0.4mA
Base - Emitter Voltage
VBE
-
-
950
mV
VCE=10V, IC=4mA
DC Current Gain
VCE=10V, IC=4mA, f=100MHz
Collector - Emitter Saturation Voltage
hFE
60
-
-
Transition Frequency
fT
650
-
-
MHz
Output Capacitance
Cob
-
-
0.70
pF
Crb
-
-
0.65
pF
VCB=10V, IE=0, f=1MHz
Cc·rbb´
-
-
9
pS
VCB=10V, IC=4mA, f=31.8MHz
Common - Base Feedback Capacitance
Collector Base Time Constant
01-June-2007 Rev. C
VCE=10V, IC=4mA
VCB=10V, IE=0, f=1MHz
Page 1 of 2
MMBTH10
Elektronische Bauelemente
50 mA, 30 V
NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
01-June-2007 Rev. C
Page 2 of 2