S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT = 1.1 GHz (Typ) A L 3 3 C B Top View 1 1 K 2 E 2 PACKAGING INFORMATION D Weight: 0.0074 g F Collector G H J 3 REF. MARKING CODE 1 A B C D E F Base J8 2 Emitter Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 30 15 5 50 200 +150, -55 ~ +150 V V V mA mW ℃ Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VCE(sat) VBE(sat) hFE fT COB 30 15 5 - - 50 100 100 500 1400 190 2 V V V nA nA nA mV mV 70 600 - MHz pF Test Conditions IC = 100 μA, IE = 0 IC = 0.1 mA, IB = 0 IE = 100 μA, IC = 0 VCB = 12 V, IE = 0 VCE = 12 V, IB = 0 VEB = 3 V, IC = 0 IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA, f = 30 MHz VCB = 10 V, IE = 0, f = 1 MHz CLASSIFICATION OF hFE 01-June-2002 Rev. A Rank L H hFE 70 - 105 105 - 190 Page 1 of 2 S9018W Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2