SMG2303
-1.9A, -30V,RDS(ON) 240mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SC-59
A
Description
L
The SMG2303 provide the designer with the best
S
2
combination of fast switching, low on-resistance
3
Top View
B
1
and cost-effectiveness.
D
G
Features
J
C
* Super high dense cell design for extremely low RDS(ON)
K
H
* Reliable and rugged
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2303
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
-1.9
A
o
ID@TA=70 C
-1.5
A
IDM
-10
A
1.38
W
0.01
W/ C
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
-30
±12
ID@TA=25 C
Pulsed Drain Current
Unit
o
VGS
3
Ratings
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2303
-1.9A, -30V,RDS(ON) 240mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gat Thershold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-30
_
_
V
BVDS/ Tj
_
-0.1
_
V/ C
VGS(th)
-1.0
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-10
uA
VDS=-30V,VGS=0
_
_
240
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70oC)
StaticDrain-Source On-Resistance
2
IDSS
RDS(ON)
_
_
Qg
_
6.2
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Total Gate Charge
2
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
1.4
_
0.3
_
7.6
_
Tr
_
8.2
_
Td(Off)
_
17.5
_
Tf
_
9
_
_
230
Coss
_
o
mΩ
o
Reference to 25 C,ID=-1mA
VGS=-10V, ID=-1.7A
VGS=-4.5V, ID=-1.3A
_
_
_
VGS=0V, ID=-250uA
460
Td(ON)
Ciss
Output Capacitance
_
Test Condition
nC
ID=-1.7A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6Ω
RD=15Ω
_
130.4
_
40
_
pF
VGS=0V
VDS=-15V
S
VDS=-10V, ID=-1.7A
f=1.0MHz
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
2
_
Symbol
Min.
Typ.
Max.
Unit
_
_
-1.2
V
IS=-1.25A, VGS=0V.
_
_
-1
A
VD=VG=0V, VS=-1.2V
-10
A
Source-Drain Diode
Parameter
2
VSD
Continuous Source Current (Body Diode)
Is
Forward On Voltage
Pulsed Source Current (Body Diode)
ISM
_
_
Test Condition
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2303
Elektronische Bauelemente
-1.9A, -30V,RDS(ON) 240mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SMG2303
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-1.9A, -30V,RDS(ON) 240mΩ
P-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 4