SSG4410
10A, 30V,RDS(ON) 13.5mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG4410 provide the designer with the best Combination of fast switching,
45
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
The SOP-8 is universally preferred for all commercial
3.80
4.00
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
1.27Typ.
0.35
0.49
4.80
5.00
0.100.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Dynamic dv/dt Rating
D
D
D
D
* Simple drive requirement
8
7
6
5
D
* Repetitive avalanche rated
4410SC
* Fast switching
Date Code
G
1
2
3
4
S
S
S
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current
1
Total Power Dissipation
Unit
30
V
±20
V
o
10
A
o
ID@TA=70 C
8
A
IDM
50
A
2.5
W
0.02
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Ratings
Tj, Tstg
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
50
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 5
SSG4410
10A, 30V,RDS(ON) 13.5mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.037
_
V/ oC
VGS(th)
1.0
_
3.0
IGSS
_
_
_
_
_
_
Test Condition
VGS=0V, ID=250uA
Reference to 25oC,ID=1mA
V
VDS=VGS, ID=250uA
±100
nA
VGS=± 20V
1
uA
VDS=30V,VGS=0
_
25
uA
VDS=24V,VGS=0
11.5
13.5
_
16.5
20
Qg
_
20
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance
Total Gate Charge
2
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
IDSS
RDS(ON)
_
3
_
11
_
_
7.5
_
Tr
_
10.2
_
Td(Off)
_
29
_
Tf
_
33
_
_
955
Coss
_
VGS=10V, ID=10A
VGS=4.5V, ID=5A
_
Td(ON)
Ciss
mΩ
nC
ID=10A
VDS=15V
VGS=5V
VDD=25V
ID=1A
nS
VGS=5V
RG=3.3 Ω
RD=25 Ω
_
555
_
204
_
pF
VGS=0V
VDS=15V
VDS=15V, ID=10A
f=1.0MHz
Crss
_
Gfs
_
20
_
S
Symbol
Min.
Typ.
Max.
Unit
_
_
1.3
V
IS=1.7A, VGS=0V.
_
_
2.3
A
VD=VG=0V, VS=1.3V
_
_
50
A
Source-Drain Diode
Parameter
Forward On Voltage 2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
VDS
Is
ISM
Test Condition
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
SSG4410
Elektronische Bauelemente
10A, 30V,RDS(ON) 13.5mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page 3 of 5
SSG4410
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
10A, 30V,RDS(ON) 13.5m Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 5
SSG4410
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
10A, 30V,RDS(ON) 13.5m Ω
Any changing of specification will not be informed individual
Page 5 of 5