SECOS SSG4410N

SSG4410N
13 A, 30 V, RDS(ON) 13.5 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
B
L
D
M
A
C
N
J
FEATURES




H
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
REF.
A
B
C
D
E
F
G
K
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
E
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
LeaderSize
S
D
SOP-8
2.5K
13’ inch
S
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
V
IDM
±20
±13
±11
±50
IS
2.3
A
PD @ TA = 25°C
3.1
W
PD @ TA = 70°C
2.2
W
TJ, TSTG
-55 ~ 150
°C
ID @ TA = 25°C
Continuous Drain Current 1
Pulsed Drain Current
ID @ TA = 70°C
2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
A
A
A
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.)
1
Thermal Resistance Junction-Ambient (Max.)
1
t ≦ 5 sec
RθJC
25
°C / W
t ≦ 5 sec
RθJA
50
°C / W
Notes
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SSG4410N
13 A, 30 V, RDS(ON) 13.5 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID= 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= 20V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
1
Diode Forward Voltage
RDS(ON)
-
-
1
μA
VDS= 24V, VGS= 0V
-
-
25
μA
VDS= 24V, VGS= 0V, TJ= 55°C
A
20
-
-
-
-
13.5
-
-
20
mΩ
VDS= 5V, VGS= 10V
VGS= 10V, ID= 10A
VGS= 4.5V, ID= 8A
gfs
-
40
-
S
VDS= 15V, ID= 10A
VSD
-
0.7
-
V
IS= 2.3A, VGS= 0V
Dynamic 2
Total Gate Charge
Qg
-
12.5
-
Gate-Source Charge
Qgs
-
2.6
-
Gate-Drain Charge
Qgd
-
4.6
-
Input Capacitance
CISS
1191
Output Capacitance
COSS
412
Reverse Transfer Capacitance
CRSS
Turn-On Delay Time
Td(on)
-
20
-
Tr
-
9
-
Td(off)
-
70
-
Tf
-
20
-
Rise Time
Turn-Off Delay Time
Fall Time
nC
ID= 10A
VDS= 15V
VGS= 4.5V
pF
f = 1 MHz
VDS= 15V
VGS= 0V
nS
VDD= 25V
ID= 1A
VGEN= 10V
RL= 25Ω
160
Notes
1
Pulse test:PW ≦ 300μs duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SSG4410N
Elektronische Bauelemente
13 A, 30 V, RDS(ON) 13.5 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SSG4410N
Elektronische Bauelemente
13 A, 30 V, RDS(ON) 13.5 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4