SSG4407P -15A, -30V, RDS(ON) 9 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications N J H REF. APPLICATION A B C D E F G PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch C G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V -15 A -11 A IDM ±50 A IS -2.1 A 3.1 W 2.3 W -55 ~ 150 °C Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.) 1 t≦5 sec RθJC 25 °C / W t≦5 sec RθJA 50 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 15-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4407P -15A, -30V, RDS(ON) 9 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±25V - - -1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 Forward Transconductance Diode Forward Voltage - - -5 -50 - - - - 9 - - 13 - - 11 gfs - 44 - S VDS= -5V, ID= -13A VSD - -0.7 - V IS=2.1A, VGS=0 ID(on) Drain-Source On-Resistance 1 1 VDS= -24V, VGS=0 µA RDS(ON) Dynamic VDS= -24V, VGS=0, TJ=55°C A VDS= -5V, VGS= -10V VGS= -10V, ID= -13A mΩ VGS= -4.5V, ID= -11A VGS= -10V,ID= -13 A,TJ=55°C 2 Total Gate Charge Qg - 37 - Gate-Source Charge Qgs - 10 - Gate-Drain Charge Qgd - 14.5 - nC ID= -13A VDS= -15V VGS= -10V Switching Turn-On Delay Time Rise Time Td(on) - 19 - Tr - 11 - Td(off) - 121 - Tf - 68 - nS Turn-Off Delay Time Fall Time VDD= -15V ID= -1A VGEN= -10V RL= 6Ω Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 15-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 15-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 15-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4