2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • • • • • 5.08 (0.200) typ. 2.54 (0.100) 2 1 SILICON PLANAR EPITAXIAL NPN TRANSISTOR HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE HERMETIC TO5 or TO39 (‘S’ Suffix) PACKAGE HI-RELIABILITY SCREENING OPTIONS AVAILABLE 3 APPLICATIONS 0.74 (0.029) 1.14 (0.045) For high reliability general purpose high voltage switching and linear applications requiring small size and low weight devices. 0.71 (0.028) 0.86 (0.034) 45° TO5 (TO-205AA) PIN 1 – Emitter Underside View PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCER VEBO IC Ptot Tstg, TJ Collector - Base Voltage Collector - Emitter Voltage (RBE = 1.0KΩ) Emitter – Base Voltage Continuous Collector Current Total Power Dissipation Tcase = 50°C De-rate Linearly Tcase > 50°C Operating and Storage Temperature Range 1000V 1000V 5V 0.5A 2W 20mW/°C -55 to +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7996 issue 1 2N5015X 2N5015SX THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction - Case Max 50 °C/W RθJA Thermal Resistance Junction - Ambient Max 175 °C/W Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (T case Parameter V(BR)CBO* Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage V(BR)EBO* Emitter - Base Breakdown Voltage V(BR)CER* =25°C unless otherwise stated) Test Conditions IC = 100µA RBE = 1.0KΩ IC = 200µA IC = 0 IE = 50µA VCB = 760V 1000 - - 1000 - - 5.0 - - - - 12 - - 100 - - 20 V ICBO* Collector - Base Cut-Off Current IEBO* Emitter - Base Cut-Off Current VEB = 4V VCE(sat)* Collector - Emitter Saturation Voltage IC = 20mA IB = 5.0mA - - 1.8 VBE(sat)* Base - Emitter Saturation Voltage IC = 20mA IB = 5.0mA - - 1.0 IC = 5mA VCE = 10V 10 - - IC = 20mA VCE = 10V 20 - 180 TCASE = -55°C 5 - - 10 - - MHz - - 60 pF hFE* DC Current Gain DYNAMIC CHARACTERISTICS (T fT COBO Transition Frequency Open Circuit Output Capacitance TCASE = 100°C case µA V =25°C unless otherwise stated) IC = 20mA VCE = 10V f = 10MHz IE = 0 f = 1.0MHz VCB = 10V * Pulse test tp = 300µs, δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7996 issue 1