2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES • • • 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. • 2.54 (0.100) Nom. SILICON NPN EPITAXIAL TRANSISTOR HERMETIC TO18 PACKAGE HI-REL SCREENING OPTIONS AVAILABLE HIGH SPEED SATURATED SWITCHING APPLICATIONS 3 1 2 TO-18 (TO-206AA) Pin 1 – Emitter Underside View Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS T VCBO VCEO VEBO IC PD TJ / Stg A hermetically sealed TO18 version of the popular 2N3904 plastic part intended for high reliability applications. CASE = 25° C unless otherwise stated Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above 25°C Operating and Storage Temperature Range 60V 40V 6.0V 200mA 0.31W 1.8mW/°C -65 to +200°C THERMAL DATA RθJA Thermal Resistance Junction - Ambient Max 565 ° C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 8022, ISSUE 1 2N3904-T18 ELECTRICAL CHARACTERISTICS (T case Symbol =25°C unless otherwise stated) Parameter Test Conditions V(BR)CEO* Collector Emitter Breakdown Voltage IC = 1.0mA V(BR)CBO Collector Base Breakdown Voltage V(BR)EBO ICEX hFE* Min. Typ. Max. IB = 0 40 - - IC = 10µA IE = 0 60 - - Emitter Base Breakdown Voltage IE = 10µA IC = 0 6 - - Collector Emitter Cut-Off Current VCE = 30V VEB = 3V - - 50 IC = 0.1mA VCE = 1.0V 40 - - IC = 1.0mA VCE = 1.0V 70 - - IC = 10mA VCE = 1.0V 100 - 300 IC = 50mA VCE = 1.0V 60 - - IC = 100mA VCE = 1.0V 30 - - IC = 1.0mA VCE = 10V 100 - 400 IC = 10mA IB = 1.0mA - - 0.2 IC = 50mA IB = 5.0mA - - 0.3 IC = 10mA IB = 1.0mA 0.65 - 0.85 IC = 50mA IB = 5.0mA - - 0.95 300 - - - - 4 DC Current Gain (VCE = 10V) hfe Small Signal Current Gain f=1.0KHz VCE(sat)* Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS (T fT Cobo Current Gain – Bandwidth Product Output Capacitance CIBO Input Capacitance NF Noise Figure td case V nA V =25°C unless otherwise stated) IC = 10mA VCE = 20V f = 100MHz IE = 0 VCB = 5V f = 1.0MHz IC = 0 VEB = 0.5V f = 1.0MHz MHz pF - - 8 - - 5 IC = 100µA VCE = 5V f = 1.0KHz RS = 1KΩ Delay Time VCC = 3V VBE = 0.5V - - 35 tr Rise Time IC = 10mA IB1 = 1.0mA - - 35 ts Storage Time VCC = 3V VBE = 0.5V - - 200 tf Fall Time IC = 10mA IB1=IB2= 1.0mA - - 50 ! Unit dB ns * Pulse test tp = 300µs, δ < 2% ! Parameter characteristic verified by design only Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 8022, ISSUE 1