2N6190 MECHANICAL DATA Dimensions in mm(Inches) PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 12.70 (0.500) min. 0.89 max. (0.035) • HERMETICALLY SEALED TO-39 PACKAGE 0.41 (0.016) 0.53 (0.021) dia. • CECC LEVEL SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 APPLICATIONS: 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) Hermetically sealed, the 2N6190 silicon planar epitaxial PNP transistor is intended for general purpose applications. 45° TO39 PACKAGE(TO205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Dissipation at TC ≤ 25°C derate above 25°C Storage Temperature Range Junction temperature 80V 80V 6V 5A 1A 10W 17.5°C/W –55 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5912 Issue: 1 2N6190 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. V(BR)CEO* Collector Emitter Breakdown Voltage IC = 50mA ICBO Collector-Base Cut Off Current IE = 0 VCB = 80V 10 µA ICEX Collector-Emitter Cut Off Current VBE = 1.5V VCE = 75V 10 µA 1.0 mA ICEO Collector-Emitter Cut Off Current IB = 0 TA = 150°C VCE = 75V 100 µA IEBO Collector-Emitter Cut Off Current VBE = 6V 100 µA VCE(sat)* Collector Emitter Saturation Voltage VBE(sat)* Base Emitter Voltage hFE* fT CIBO DC Current Gain Transition Frequency 80 Unit V IC = 2A IB = 0.2A 0.7 IC = 5A IB = 0.5A 1.2 IC = 2A IB = 0.2A 1.2 IC = 5A IB = 0.5A 1.8 IC = 0.5A VCE = 2V 30 IC = 2A VCE = 2V 30 IC = 5A VCE = 2V 20 VCE = 10V IC = 0.5A f = 10MHz Input Capacitance, Output Open VBE = 2V Circuited f =100kHz VCB = 10V IC = 0 IE = 0 120 30 V V — MHz 1250 pF 300 COBO Open Circuit Output Capacitance td Delay Time VCC = 40V tr Rise Time VBE(off) = 3.0 IB1 = 0.2A 100 ts Storage Time VCC = 40V 20 µs tf Fall Time IB1 = IB2 = 0.2A 200 ns f =100kHz IE = 2.0A IE = 2.0A 100 ns * Pulse Test: tp = 300µs , δ = 1%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5912 Issue: 1