BFX85 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON EPITAXIAL SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) VCEO = 60V 12.70 (0.500) min. 0.89 max. (0.035) IC = 1A 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. APPLICATIONS 2.54 (0.100) 2 1 3 • General Purpose Switching and Amplification • Industrial Applications 0.74 (0.029) 1.14 (0.045) • Hermetic Metal Package 0.71 (0.028) 0.86 (0.034) • Hi-Rel Screening Options Available 45° TO39 (TO-205AD) Underside View PIN 1 – Emitter PIN 2 – Base PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 60V IC Collector Current Continuous 1A Ptot Total Power Dissipation Tamb < 25°C Tcase < 25°C Tcase < 25°C <100°C Tstg Storage Temperature Tj Operating Junction Temperature 800 mW 5W 2.86W –65 to 150°C 175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5808 Issue 1 BFX85 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter IEBO Emitter Cut–off Current Test Conditions Typ. Max. VEB = 6V IC = 0 Min. 10 500 VEB = 5V IC = 0 2 50 VEB = 5V IC = 0 0.1 2.5 Tj = 100°C ICBO Collector Cut–off Current VCB =80V IE = 0 2 50 VCB =100V IE = 0 0.1 2.5 Tj = 100°C VCB =100V IE = 0 10 500 VCB =100V IE = 0 0.5 30 Tj = 100°C hFE VCE(sat) VBE(sat) CTC VCE = 10V IC = 10mA 50 90 VCE = 10V IC = 150mA 70 142 VCE = 10V IC = 500mA 30 90 VCE = 10V IC = 1A 15 50 IC = 10mA IB = 1mA 150 200 Collector – Emitter IC = 150mA IB = 15mA 150 350 Saturation Voltage IC = 500mA IB = 50mA 0.35 1 IC = 1A IB = 100mA 0.66 1.6 IC = 10mA IB = 1mA 0.69 1.2 IC = 150mA IB = 15mA 0.92 1.3 IC = 500mA IB = 50mA 1.15 1.5 IC = 1A IB = 100mA 1.4 2 VCB = 10V IE = IC =0 7 12 DC Current Gain Base – Emitter Saturation Voltage Collector Capactitance Transition Frequency (f = 1MHz) ton Turn-on time td Delay Time ICon = 150mA; IBon = 15mA 15 tr Rise Time IBoff = -15mA 40 toff Turn-off Time 360 ts Storage Time 300 tf Fall Time 60 VCE = 10V IC = 50mA 50 nA µA nA µA nA µA --- f=1MHz fT Unit mV V V pF MHz 185 55 ns THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance Junction – Ambient Thermal Resistance Junction – Case 200 35 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5808 Issue 1