RB441Q-40 SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for low current rectification Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Features Black Part No. • Low forward rise voltage (VF) XXX Max. 2.9 • Small pitch enables insertion on PCBs • Glass sealed envelope for high reliability Min. 27.5 • Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 40 V Mean Rectifying Current IO 100 mA IFSM 1 A Tj 125 O - 40 to + 125 O Peak Forward Surge Current Junction Temperature Storage Temperature Range TS C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 10 mA at IF = 100 mA VF - 0.34 0.55 V Reverse Current at VR = 40 V IR - 100 µA Terminal Capacitance at VR = 10 V, f = 1 MHz CT 6 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/06/2007 RB441Q-40 REVERSE CHARACTERISTICS FORWARD CHARACTERISTICS 10m Typ. pulse measurement REVERSE CURRENT, AMPERES Typ. pulse measurement 100m Ta= =7 5 C Ta= 25 C 1m -25 C Ta =1 25 C 10m Ta FORWARD CURRENT, AMPERES 1 100 10 0 0.2 0.4 0.6 Ta=125 oC 1m o 100 Ta=75 C 10 o Ta=25 C 1 0.1 0.7 0 10 FORWARD VOLTAGE,V 20 40 30 REVERSE VOLTAGE,V TERMINAL CAPACITANCE CHARACTERISTICS FORWAR SURGE CURRENT CHARACTERISTIC FORWARD SURGE CURRENT (A) TERMINAL CAPACITANCE (pF) 1000 100 10 1 0 5 10 15 20 25 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1 REVERSE VOLTAGE (V) 10 100 1000 PULSE WIDTH (mS) MEAN RECTIFYING CURRENT CHARACTERISTICS DERATING CURVE (mounting on glass epoxy PCBs) POWER DISSIPATION, W 0.5 I O CURRENT, % 100 80 60 40 20 0 25 50 75 100 125 AMBIENT TEMPERATURE, ( C) 0.4 Sine wave (Tj=25 C) 0.3 DC (Tj=25 C) 0.2 0.1 0 0.5 AVERAGE FORWARD CURRENT (A) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/06/2007