SG200N06S Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) G E G=Gate, C=Collector, E=Emitter Symbol Test Conditions Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Maximum Ratings Unit VCES VCGR TJ=25oC to 150oC TJ=25oC to 150oC; RGE=1 M ; 600 600 V VGES VGEM Continuous Transient ±20 ±30 V IC25 IC90 ICM TC=25oC TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=22 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC SSOA Md A 600 W A -55...+150 150 -55...+150 TJ TJM Tstg VISOL 200 100 300 ICM=100 @ 0.8 VCES 50/60Hz IISOL 1 mA t =1 min t =1 s Mounting torque Terminal connection torque(M4) o C 2500 3000 V~ 1.5/13 1.5/13 Nm/Ib.in. 30 g Weight (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=250uA; VGE=0V VGE(th) IC=10mA; VCE=VGE ICES VCE=0.8VCES; VGE=0V; 2.5 TJ=25 C o TJ=125 C VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V max. 600 o IGES typ. Unit V 6 V 200 2 uA mA ±400 nA 2.5 V SG200N06S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Test Conditions IC=60A; VCE=10V Pulse test, t 300us, duty cycle min. typ. 40 57 VCE=25V; VGE=0V; f=1MHz S 600 305 Qg 465 IC=IC90; VGE=15V; VCE=0.5VCES Qgc td(on) max. 9000 Cres Qge Unit 2% Cies Coes Characteristic Values pF 52 nC 228 o Inductive load, TJ=25 C 100 ns tri IC=IC90; VGE=15V; L=30uH 100 ns Eon VCE=0.8VCES; RG=Roff=2.4 2.4 mJ td(off) Remarks:Switching times may increase 800 1100 ns for VCE(Clamp) 350 500 ns tfi 0.8VCES' higher TJ or Eoff increased RG 14.4 mJ td(on) Inductive load, TJ=125oC 100 ns tri IC=IC90; VGE=15V; L=30uH 200 ns Eon VCE=0.8VCES; RG=Roff=2.4 4.8 mJ td(off) Remarks:Switching times may 780 ns increase for VCE(Clamp) 250 ns 14.4 mJ tfi Eoff higher TJ or increased RG 0.8VCES' RthJC RthCK 0.21 0.05 K/W K/W