SG50N06S, SG50N06DS Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) G=Gate, C=Collector, E=Emitter G E SG50N06S Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 SG50N06DS Symbol Test Conditions Maximum Ratings Unit VCES VCGR TJ=25oC to 150oC TJ=25oC to 150oC; RGE=1 M ; 600 600 V VGES VGEM Continuous Transient ±20 ±30 V IC25 IC90 ICM TC=25oC TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC SSOA A 250 W A -55...+150 150 -55...+150 TJ TJM Tstg Md 75 50 200 ICM=100 @ 0.8 VCES Mounting torque Terminal connection torque(M4) o 1.5/13 1.5/13 Weight Nm/Ib.in. 30 g o 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C C (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=250uA; VGE=0V 600 VGE(th) IC=250uA; VCE=VGE 2.5 ICES VCE=0.8VCES; VGE=0V; o TJ=125 C IGES VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V typ. Unit max. V 5 V 200 1 uA mA ±100 nA 2.5 V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Characteristic Values Test Conditions IC=IC90; VCE=10V Pulse test, t 300us, duty cycle min. typ. 25 35 max. S 2% Cies Coes 4000 VCE=25V; VGE=0V; f=1MHz 340 pF Cres 100 Qg 110 180 30 50 40 100 Qge IC=IC90; VGE=15V; VCE=0.5VCES Qgc td(on) Unit o nC Inductive load, TJ=25 C 50 ns IC=IC90; VGE=15V; L=100uH 30 ns VCE=0.8VCES'; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 200 ns 150 ns 3 mJ Inductive load, TJ=125 C 50 ns tri IC=IC90; VGE=15V; L=100uH 25 ns Eon VCE=0.8VCES'; RG=Roff=2.7 3 mJ td(off) Remarks:Switching times may increase 280 ns for VCE(Clamp) 250 ns 4.2 mJ tri td(off) tfi Eoff td(on) tfi Eoff o 0.8VCES' higher TJ or increased RG RthJC 0.50 RthCK 0.05 Symbol Characteristic Values Test Conditions min. IR IRM trr RthJC K/W (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) VF K/W typ. o IF=60A; TVJ=150 C Pulse test, t 300us, duty cycle d o 2%; TVJ=25 C TVJ=25oC; VR=VRRM TVJ=150oC IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V o IF=1A; -di/dt=50A/us; VR=30V; TJ=25 C Unit max. 1.75 2.40 V 650 2.5 uA mA 8.0 A 35 ns 0.85 K/W