SSM9974GP,S
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
60V
R DS(ON)
12mΩ
ID
72A
DESCRIPTION
The SSM9974 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9974GS is in a TO-263 package, which is
widely used for commercial and industrial surface-mount
applications.
Pb-free; RoHS-compliant TO-220
and TO-263 (D2PAK)
G
G
The through-hole version, the SSM9974GP in TO-220,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
D
D
S
S
TO-220 (suffix P)
TO-263 (suffix S)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
±20
V
ID
Continuous drain current, TC = 25°C
72
A
46
A
300
A
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
104
W
Linear derating factor
0.8
W/°C
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
RΘ JC
Maximum thermal resistance, junction-case
1.2
°C/W
RΘ JA
Maximum thermal resistance, junction-ambient
62
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
5/12/2006 Rev.3.1
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SSM9974GP,S
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.07
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=45A
-
-
12
mΩ
VGS=4.5V, ID=30A
-
-
15
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=30A
-
50
-
S
IDSS
Drain-source leakage current
VDS=60V, VGS=0V
-
-
10
uA
VDS=48V ,VGS=0V, Tj = 150°C
-
-
100
uA
VGS=±20V
-
-
±100
nA
ID=30A
-
43
69
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=48V
-
8
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
31
-
nC
VDS=30V
-
14
-
ns
48
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=30A
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
42
-
ns
tf
Fall time
RD=1Ω
-
67
-
ns
Ciss
Input capacitance
VGS=0V
-
3180 5100
pF
Coss
Output capacitance
VDS=25V
-
495
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
460
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Ω
Min.
Typ.
-
Source-Drain Diode
Symbol
Parameter
VSD
Forward voltage
trr
Qrr
2
Test Conditions
Max. Units
IS=45A, VGS=0V
-
-
1.2
V
Reverse-recovery time
IS=30A, VGS=0V,
-
45
-
ns
Reverse-recovery charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
5/12/2006 Rev.3.1
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SSM9974GP,S
250
125
10V
7.0V
o
T C =25 C
100
ID , Drain Current (A)
ID , Drain Current (A)
200
150
5.0V
4.5V
100
10V
7.0V
5.0V
4.5V
T C = 150 o C
75
50
V G =3.0V
25
50
V G =3.0V
0
0
0
2
4
6
0
8
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
2.0
I D = 30 A
T C =25 o C
I D =45A
V G =10V
1.6
16
Normalized RDS(ON)
RDS(ON) (mΩ )
6
Fig 2. Typical Output Characteristics
20
12
8
1.2
0.8
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
30
Normalized VGS(th) (V)
1.8
20
T j =25 o C
IS(A)
T j =150 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
Fig 5. Forward Characteristic of
Reverse Diode
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
5/12/2006 Rev.3.1
4
V DS , Drain-to-Source Voltage (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9974GP,S
f=1.0MHz
16
10000
VGS , Gate to Source Voltage (V)
I D = 35 A
V DS =48V
V DS =38V
V DS =30V
C iss
C (pF)
12
8
1000
C oss
C rss
4
0
100
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
100
ID (A)
100us
1ms
10
10ms
o
T C =25 C
Single Pulse
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
125
VG
V DS =5V
T j =25 o C
ID , Drain Current (A)
100
T j =150 o C
QG
4.5V
75
QGS
QGD
50
25
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
5/12/2006 Rev.3.1
Fig 12. Gate Charge Waveform
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SSM9974GP,S
PHYSICAL DIMENSIONS - TO-220
E
A
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
L1
L
c
b
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
e
PART MARKING - TO-220 and TO-263
PART NUMBER: 9974GP or 9974GS
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
YWWSSS
PACKING: Moisture sensitivity level MSL3
TO-263: 800 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-220: 1000pcs in tubes packed inside a moisture barrier bag (MBB).
5/12/2006 Rev.3.1
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PHYSICAL DIMENSIONS - TO-263
E
SYMBOLS
D
b1
L2
L3
b
e
L4
Millimeters
MIN
NOM MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10 ####
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
A
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
c1
c
A1
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