SSM85T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
G
Pb-free; RoHS compliant.
BV DSS
30V
R DS(ON)
6mΩ
ID
75A
S
DESCRIPTION
The SSM85T03GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM85T03J in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance. The devices
have a maximum junction temperature rating of 175°C for improved thermal
margin and reliability.
G D
S
G
D
S
TO-252 (H)
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
ID @ TC=25°C
Continuous Drain Current, VGS @ 4.5V
75
A
ID @ TC=100°C
Continuous Drain Current, VGS @ 4.5V
55
A
1
IDM
Pulsed Drain Current
350
A
PD @ TC=25°C
Total Power Dissipation
107
W
0.7
W/°C
29
mJ
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
°C
TJ
Operating Junction Temperature Range
-55 to 175
°C
THERMAL DATA
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.4
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
5/17/2005 Rev.2.3
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SSM85T03GH,J
ELECTRICAL CHARACTERISTICS @ Tj = 25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.018
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
10
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=30A
-
32
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=175 C)
VDS=24V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=30A
-
33
52
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
7.5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
24
nC
VDS=15V
-
11.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
77
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
35
-
ns
tf
Fall Time
RD=0.5Ω
-
67
-
ns
Ciss
Input Capacitance
VGS=0V
-
2700 4200
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
380
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
5/17/2005 Rev.2.3
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SSM85T03GH,J
150
300
T C =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
o
T C = 175 C
10V
7.0V
6.0V
250
200
150
4.5V
100
100
4.5V
V G =4.0V
50
V G =4.0V
50
0
0
0
1
2
3
4
5
6
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
2.0
I D =20A
T C =25°C
I D =20A
V G =10V
Normalized R DS(ON)
11
RDS(ON) (mΩ )
10V
7.0V
6.0V
9
7
1.5
1.0
5
3
0.5
2
4
6
8
10
12
-50
25
100
175
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
30
3
2.5
T j =25 o C
2
Is (A)
VGS(th) (V)
T j =175 o C
20
1.5
1
10
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
5/17/2005 Rev.2.3
1.2
-50
25
100
175
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM85T03GH,J
f=1.0MHz
14
10000
I D =30A
V DS =15V
V DS =20V
V DS =24V
10
Ciss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
Coss
Crss
4
2
100
0
0
10
20
30
40
50
60
1
70
6
11
16
21
26
31
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
ID (A)
1ms
10ms
10
100ms
T c =25 o C
Single Pulse
DC
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
5/17/2005 Rev.2.3
Charge
Q
Fig 12. Gate Charge Waveform
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SSM85T03GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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