SSM90T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
G
Pb-free; RoHS compliant.
BVDSS
30V
R DS(ON)
4mΩ
ID
75A
S
DESCRIPTION
G D
S
The SSM90T03GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM90T03GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G
D
S
TO-252 (H)
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID @ TC=25°C
Continuous Drain Current, VGS @ 4.5V
75
A
ID @ TC=100°C
Continuous Drain Current, VGS @ 4.5V
63
A
1
IDM
Pulsed Drain Current
350
A
PD @ TC=25°C
Total Power Dissipation
96
W
0.7
W/°C
29
mJ
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
THERMAL DATA
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.3
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
5/17/2005 Rev.2.4
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SSM90T03GH,J
ELECTRICAL CHARACTERISTICS @ T j=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
V/°C
BVDSS
Drain-Source Breakdown Voltage
∆ BVDSS/ ∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.015
-
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
0.8
-
3
V
VDS=10V, ID=30A
-
55
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=40A
-
60
96
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VDS=VGS, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
VDS=15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
5/17/2005 Rev.2.4
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SSM90T03GH,J
200
160
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
160
120
V G =3.0V
80
T C = 1 50 o C
140
ID , Drain Current (A)
T C =25 o C
10V
7.0V
5.0V
4.5V
120
100
V G =3.0V
80
60
40
40
20
0
0
0
1
2
0
3
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
2.0
5.0
I D =20A
I D = 45 A
V G =10V
1.8
o
Normalized R DS(ON)
T C =25 C
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.5
1.5
1.3
1.0
0.8
4.0
0.5
0.3
0.0
3.5
2
4
6
8
10
12
-50
0
Fig 3. On-Resistance vs. Gate Voltage
2
15
1.5
VGS(th) (V)
Is (A)
150
T j =25 o C
10
1
0.5
5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
5/17/2005 Rev.2.4
100
Fig 4. Normalized On-Resistance
vs. Junction Temperature
20
T j =150 o C
50
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
0.9
1
-50
25
100
175
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM90T03GH,J
f=1.0MHz
14
10000
I D = 40 A
VGS , Gate to Source Voltage (V)
12
Ciss
V DS =15V
V DS =20V
V DS =24V
10
C (pF)
8
6
Coss
Crss
1000
4
2
0
100
0
20
40
60
80
100
120
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
1ms
10ms
10
T c =25 o C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
5/17/2005 Rev.2.4
Charge
Q
Fig 12. Gate Charge Waveform
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SSM90T03GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
5/17/2005 Rev.2.4
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