E13005-225 - Thinki Semiconductor Co.,Ltd.

E13005-225
Pb Free Plating Product
®
Pb
E13005-225
MJE Power Transistor
Product specification
Silicon NPN Power Transistor
MJE13005 series
DESCRIPTION
Silicon NPN, high power transistors in a plastic
envelope, primarily for use in high-speed power
switching circuits.
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
1. B
l
Value
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
4.0
A
Base Current
IB
2.0
A
Ptot
70
W
Tj
150
o
Tstg
-55~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
2. C
3. E
C
C
Unit:mm
Electrical Characteristics ( Ta = 25℃ )
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICBO
VCE=700V, IE=0
—
—
10
uA
Emitter Cut-off Current
IEBO
VEB=6.0V, IC=0
—
—
10
uA
Collector-Emitter Sustaining Voltage
VCEO
IC=10mA, IB=0
400
—
—
V
VCE=5V, IC=1.0A
15
—
30
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat) IC=4.0A,IB=1.0A
—
—
1.5
V
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=0.5A
—
—
1.6
V
4
—
—
MHz
2.0
2.5
4.0
us
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.5A
Turn Off Time
tS
IB1=-IB2=0.5A,
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