SAVANTIC 2SD882

SavantIC Semiconductor
Product Specification
2SD882
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB772
·
APPLICATIONS
·Audio amplifier
·Voltage regulator
·DC-DC converter
·Relay driver
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
40
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
3
A
ICM
Collector current-peak
7
A
PD
Total power dissipation
Ta=25
1
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD882
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.0A; IB=0.2A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2.0A ;IB=0.2A
2.0
V
ICBO
Collector cut-off current
VCB=30V; IE=0
1
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1
µA
hFE-1
DC current gain
IC=20mA ; VCE=2V
30
hFE-2
DC current gain
IC=1A ; VCE=2V
60
Transition frequency
IC=0.1A ; VCE=5V
90
MHz
Collector output capacitance
f=1MHz ; VCB=10V
45
pF
fT
COB
CONDITIONS
hFE-2 Classifications
R
Q
P
E
60-120
100-200
160-320
200-400
2
MIN
TYP.
MAX
30
UNIT
V
400
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD882
SavantIC Semiconductor
Product Specification
2SD882
Silicon NPN Power Transistors
4