SBP13005-O High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. TO-220HW Absolute Maximum Ratings Symbol VCES Paramete r Collector-Emitter Voltage VCEO VEBO Test Conditions Value Units VBE = 0 700 V Collector-Emitter Voltage IB = 0 400 V Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 4.0 A ICP Collector pulse Current 8.0 A IB Base Current 2.0 A IBM Base Peak Current 4.0 A PC tP = 5ms Total Dissipation at Tc* = 25℃ 75 Total Dissipation at Ta* = 25℃ 2.0 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case 1.67 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Ordering Information Order codes SBP13005-O SBP13005-O-HW Package Marking Halogen Free Packaging TO220C P13005-O NO Tube TO220HW P13005-O NO Tube Rev.B Mar.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. SBP13005-O Electrical Characteristics (TC=25℃ Symbol VCEO(sus) VCE(sat) unless otherwise noted) Parameter Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Ic=10mA,Ib=0 Min Typ 400 - - - Base-Emitter Saturation Voltage Ic=1.0A,Ib=0.2A hFE - - Vce=2V,Ic=1.0A 10 - 40 Vce=2V, Ic=2.0A 8 - 40 2.5 4.0 0.15 0.4 - 1.2 4.0 - 0.12 0.3 - 1.2 3.0 - 0.08 0.4 Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ ad Resist Resistiive Lo Loa ts Storage Time tf Fall Time 1.2 - Collector-Base Cutoff Current DC Current Gain 0.5 - Ic=2.0A,Ib=0. 5A ICBO - Units V V 1.0 Ic=4A,Ib=1.0A VBE(sat) Max 0.3 Ic=1.0A,Ib=0.2A Ic=2.0A,Ib=0. 5A Voltage Value 1.6 1.0 5.0 V mA VCC=125V , Ic=2.0A IB1=0.4A , IB2=-1.0A Tp=25㎲ ㎲ ctive Load Indu Induc ts Storage Time tf Fall Time VCC=15V ,Ic=1A IB1=0.4A , IB2=-0.1A L=0.35mH,Vclamp=300V ㎲ ctive Load Indu Induc ts Storage Time tf Fall Time VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/6 . Steady, keep you advance SBP13005-O Fig. 1 DC Current Gain ation Voltage Fig. 2 Collector-Emitter Satur Satura Fig. 3 BaseBase---Emitter Saturation Voltage Fig.5 Power Derating Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/6 Steady, keep you advance SBP13005-O Resistive Load Switching Test Ci Cirrcuit Inductive Load Switching & RBSOA Test Ci Cirrcuit 4/6 . Steady, keep you advance SBP13005-O C Packa ge Dimension TO-220 O-220C Packag Unit:mm 5/6 Steady, keep you advance SBP13005-O HW Packa ge Dimension TO-220 O-220HW Packag Unit:mm 6/6 . Steady, keep you advance