SBP13005-O SemiWell Semiconductor High Voltage Fast Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ Minimum lot to lot hFE Variation ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol Parameter Condition Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 4.0 A ICP Collector pulse Current 8.0 A IB Base Current 2.0 A IBM Base Peak Current 4.0 A PC Total Dissipation at TC = 25℃ 75 W TJ Operation Junction Temperature - 40 ~ 150 ℃ Storage Temperture - 40 ~ 150 ℃ TSTG tP = 5ms Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 1.67 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Oct 2008. Rev. 0 1/4 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved SBP13005-O Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Ratings Symbol Items Conditions Unit Min Colletor Cut-off Current VCE = 700V ( VBE = -1.5V ) VCE = 700V Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA Typ. Max 1.0 ICEV VCEO(SUS) VCE(sat) VBE(sat) hFE mA Collector-Emitter Saturation Voltage TC = 100℃ 5.0 400 V IC = 1.0A, IB = 0.2A 0.5 IC = 2.0A, IB = 0.5A 0.6 IC = 4.0A, IB = 1.0A 1.0 IC = 1.0A, IB = 0.2A 1.2 IC = 2.0A, IB = 0.5A 1.6 Base-Emitter Saturation Voltage mA mA IC = 1.0A, VCE = 5V 10 30 IC = 2.0A, VCE = 5V 10 30 DC Current Gain IC = 2.0A, VCC = 125V ts Storage Time 4.0 IB1 = 0.4A, IB2 = -0.4A tf Fall Time 0.9 TP = 25us 2/4 ㎲ SBP13005-O Fig. 1 DC Current Gain Fig. 2 Saturation Voltage 100 10 hFE, DC CURRENT GAIN 10 1 0.01 0.1 1 Ic=4IB VBE(S), VCE(S) Saturation Voltage V CE=5V 10 V BE(sat) 1 0.1 V CE(sat) 0.01 0.01 IC[A], Collector Current Fig. 3 0.1 1 10 IC[A], Collector Current Power Derating Fig. 4 Safe Operation Area 100 10 80 70 60 50 Dissipation 40 30 5m s s 0u 50 Icmax(pulse) Icmax(DC) IC[A], Collector Current PC[W], Power 90 1 0.1 20 10 0 0 25 50 75 100 125 150 175 200 TC[℃], Case Temperature 0.01 1 10 100 1000 VCE[V], Collector Emitter Voltage Fig. 5 Collect output capacitance 1000 COB[pF], Capacitance 100 10 1 0.1 1 10 100 1000 VCB[V], Collector Base Voltage 3/4 SBP13005-O TO-220 Package Dimension 4/4