WINSEMI SBP13009-S

SBP13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
�
Very High Switching Speed
�
High Voltage Capability
�
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector -Emitter Voltage
VBE=0
700
V
VCEO
Collector -Emitter Voltage
IB=0
400
V
VEBO
Emitter-Base Voltage
IC=0
9.0
V
IC
Collector Current
12
A
ICP
Collector pulse Current
25
A
IB
Base Current
6.0
A
IBM
Base Peak Current
12
A
tP=5ms
Total Dissipation at Tc*=25℃
100
Total Dissipation at Ta*=25℃
2.2
PC
W
TJ
Operation Junction Temperature
-40~150
℃
TSTG
Storage Temperature
-40~150
℃
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
Value
Units
1.25
℃/W
40
℃/W
SBP13009-S
Electrical Characteristics(Tc=25℃
Symbol
VCEO(sus)
unless otherwise noted)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
Value
Min
Typ
Max
400
-
-
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
VCE(sat)
Collector -Emitter Saturation Voltage
Base -Emitter Saturation Voltage
-
-
-
Vce=5V,Ic=5.0A
10
-
40
Vce=5V,Ic=8.0A
6
-
40
1.5
3.0
0.17
0.4
-
0.8
2.0
-
0.04
0.1
-
0.8
2.5
-
0.05
0.15
Collector -Base Cutoff Current
Vcb=700V
(Vbe=-1.5V)
Vcb=700V,Tc=100℃
DC Current Gain
Storage time
tf
Fall Time
VCC=125V,Ic=6.0A
IB1=1.6A,IB2=-1.6A
TP=25µs
Inductive Load
ts
VCC=15V,Ic=5A
IB1=1.6A,Vbe(off)=5V
L=0.35mH,Vclamp=300
V
Storage Time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
1.2
1.6
1.5
1.0
5.0
V
V
V
mA
-
Resistive Load
ts
2.0
-
Ic=8.0A,Ib=1.6A
V
1.5
-
Tc=100℃
hFE
1.0
-
Ic=8.0A,Ib=1.6A
ICBO
-
-
Ic=5.0A,Ib=1.0A
VBE(sat)
-
-
Tc=100℃
V
0.5
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Units
VCC=15V,Ic=1A
IB1=0.4A,Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100℃
µs
µs
µs
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
Steady, all for your advance
SBP13009-S
Fig.1 DC Current Gain
Fig.3 Bade-Emitter Saturation Voltage
Fig.5 Power Derating
Fig.2 Collector -Emitter Saturation Voltage
Fig.4 Safe Operation Area
Fig.6 Reverse Biased Safe Operation Area
3/5
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SBP13009-S
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
4/5
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SBP13009-S
To-220 Package Dimension
Unit:mm
5/5
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