AON7422 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. VDS 30V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.6mΩ RDS(ON) (at VGS = 4.5V) < 6mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 Top View D Bottom View Top View S S S G Pin 1 D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current TC=100°C C TA=25°C TA=70°C Maximum 30 Units V ±20 V ID 32 IDM 150 IDSM 15 A 25 A 11 Avalanche Current C IAR 47 A Repetitive avalanche energy L=0.1mH C EAR 110 mJ PD 35 TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: February 2009 1.7 PDSM TA=70°C Steady-State Steady-State RθJA RθJC www.aosmd.com W 1 TJ, TSTG Symbol t ≤ 10s W 14 °C -55 to 150 Typ 30 60 3 Max 40 75 3.5 Units °C/W °C/W °C/W Page 1 of 6 AON7422 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 150 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs µA 100 nA 1.75 2.3 V 3.8 4.6 5.3 6.4 4.7 6 mΩ 1 V 40 A A 100 0.68 mΩ S 1900 2400 2900 pF 260 370 480 pF 150 245 340 pF 0.5 1 1.5 Ω 35 44 53 nC 16 20 24 nC 5.6 7 8.4 nC 5.4 9 12.6 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) ID(ON) RDS(ON) Typ 8 ns 9 ns 36 ns 9 ns 9 12 14 21 26 31 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2009 www.aosmd.com Page 2 of 6 AON7422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 150 10V 6V 80 3.5V 90 60 ID(A) ID (A) VDS=5V 4V 120 40 60 VGS=3V 30 20 0 25°C 2 3 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 1.6 VGS=4.5V 5 RDS(ON) (mΩ) 125°C 4 VGS=10V 3 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V10 1.2 1 ID=20A 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 8 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 6 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 VDS=15V ID=20A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 10ms DC 1.0 0.1 TJ(Max)=150°C TC=25°C 0.0 0.01 160 10µs RDS(ON) limited Power (W) 100.0 10.0 5 30 200 1000.0 10 1 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.1 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Coss 500 0 ID (Amps) 2500 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2009 www.aosmd.com Page 4 of 6 AON7422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C 120 100 35 Power Dissipation (W) IAR (A) Peak Avalanche Current 140 TA=150°C TA=100°C 80 60 40 TA=125°C 20 30 25 20 15 10 5 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 35 TA=25°C 30 1000 25 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 20 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2009 www.aosmd.com Page 5 of 6 AON7422 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: February 2009 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6