CHENMKO ENTERPRISE CO.,LTD 2N7002SSPT SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High density cell design for low R DS(ON) . * Suitable for high packing density. (1)(G1) * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 1.2~1.4 (D1)(6) 0.65 (S2) (S1) (G2) CONSTRUCTION 0.15~0.35 (3) (D2)(4) 1.15~1.35 * Dual N-Channel Enhancement 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 2.0~2.2 0.65 6 4 1 3 Absolute Maximum Ratings 2.15~2.45 Dimensions in millimeters SC-88/SOT-363 TA = 25°C unless otherwise noted 2N7002SSPT Symbol Parameter VDSS Drain-Source Voltage 50 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 50 V ±20 V VGSS ID Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed PD Units TA= 25°C 510 TA= 70°C 1500 TA= 25°C 960 mW mA Maximum Power Dissipation 900 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C TA= 70°C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 130 °C/W RθJC Thermal Resistance, Junction-to-Case 60 °C/W 2004-7 RATING CHARACTERISTIC CURVES ( 2N7002SSPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 50 Typ Max Units 1 µA 0.5 mA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V V TC=125°C IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 1.9 2.5 V VGS = 10 V, ID = 510 m A 1 2 VGS = 4.5 V, ID = 350 mA 1.6 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance ID(ON) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, VDS = 10V 1 Ω 4.0 1500 mA VDS = 10 V , I D = 510 mA 400 VDS = 25 V, VGS = 10 V, I D = 510 mA 0.19 mS DYNAMIC CHARACTERISTICS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time tr toff Turn-Off Time tf 1 nC 0.33 VDS = 25 V, VGS = 0 V, f = 1.0 MHz 20 pF 13 5 VDD = 25V ID = 250 mA, VGS = 10 V, RGEN = 25 Ω 6 20 6 20 VDD = 25 V, ID = 250 mA, VGS = 10 V, RGEN = 25 Ω 11 20 5 20 nS nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 510 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 1.5 A VSD Drain-Source Diode Forward Voltage 1.2 V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. VGS = 0 V, IS = 200 mA (Note 1) 0.8 RATING CHARACTERISTIC CURVES ( 2N7002SSPT ) Typical Electrical Characteristics 1.5 3 8.0 7.0 VGS = 3.5V 6.0 1.2 RDS(on) , NORMALIZED 5.5 5.0 0.9 4.5 0.6 4.0 3.5 0.3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS =10V 3.0 5.0 6.0 1.5 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 8.0 10 1 0.3 5 0.6 0.9 I D , DRAIN CURRENT (A) 1.2 1.5 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 2.5 V GS = 10V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.51A 1.8 R DS(ON), NORMALIZED 7.0 0 1 VDS DRAIN-SOURCE ON-RESISTANCE 5.5 0.5 Figure 1. On-Region Characteristics. V GS = 10V 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 2 TJ = 125°C 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0 150 0.3 I Figure 3. On-Resistance Variation with Temperature. D 0.6 0.9 , DRAIN CURRENT (A) 1.2 1.5 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 V DS = 10V T J = -55°C V th, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.5 25°C 125°C 1.2 I D , DRAIN CURRENT (A) 4.5 2 0 0 4.0 2.5 0.9 0.6 0.3 0 1 2 3 4 5 6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7 8 V DS = V GS I D = 250µA 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) Figure 6. Gate Threshold Variation with Temperature. 125 150 RATING CHARACTERISTIC CURVES ( 2N7002SSPT ) 1.16 I D 1.5 1 = 250µ A 1.12 1.04 1 0.96 0.92 0.88 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 TJ = 125°C -55°C 0.01 0.001 0.2 150 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 10 100 V DS V GS , GATE-SOURCE VOLTAGE (V) 50 C iss CAPACITANCE (pF) 25°C 0.1 Figure 7. Breakdown Voltage Variation with Temperature. 20 C oss 10 C rss 5 f = 1 MHz 2 V GS = 0 V 1 0.1 8 = 25V I D = 0.51A 6 4 2 0 0.2 0.5 1 2 5 10 20 50 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. V DS = 10V TJ = -55°C 0.6 0.5 25°C 0.4 125°C 0.3 0.2 0.1 0 0.3 V GS 0.6 0.9 1.2 , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. 0.7 0 V GS = 0V 0.5 I S , REVERSE DRAIN CURRENT (A) 1.08 I D , DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics (continued) 1.5 Figure 11. Transconductance Variation with Drain Current and Temperature. 1 1.2 RATING CHARACTERISTIC CURVES ( 2N7002SSPT ) Typical Thermal Characteristics 0.55 I D , STEADY-STATE DRAIN CURRENT (A) STEADY-STATE POWER DISSIPATION (W) 1.2 1.1 1a 1 0.9 1b 0.8 1c 4.5"x5" FR-4 Board 0.7 o TA = 2 5 C Still Air 0.6 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 1a 0.5 1b 0.45 1c 0.4 4.5"x5" FR-4 Board o TA = 2 5 C Still Air VG S = 1 0 V 0.35 0 Figure 12. SOT-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 0.025 0.05 0.075 0.1 2 2oz COPPER MOUNTING PAD AREA (in ) 0.125 Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 3 2 RD S(O N) LIM IT 10 0 1m us s 0.5 10 0.2 10 0.1 V 0.05 GS 0m ms s 1s = 10V DC SINGLE PULSE R θJ A = See Note 1c 0.02 T A = 25°C 0.01 1 2 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 14. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D , DRAIN CURRENT (A) 1 0 .5 D = 0.5 0 .2 0.2 0 .1 R JA (t) = r(t) * R JA θ θ R JA = See Note 1c θ 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 0.01 0 .0 0 0 1 0 .001 t2 TJ - T = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 A Single Pulse 0 .0 1 0 .1 t 1, TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDC7002N.SAM