COMSET CS684TO3

CS684 TO3
PNP SILICON DARLINGTON POWER
TRANSISTORS
PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
They are mounted in Jedec TO-3 metal package.
Compliance to RoHS.
CS684 is the BD684 in TO3 package.
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO
-VCBO
Ratings
-VEBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-IC
Collector Current
-IB
PT
TJ
TStg
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
-IC
-ICM
-IBM
@ Tmb = 25°C
Value
Unit
140
140
5
V
V
V
4
6
0.1
65
150
-65 to +150
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
Unit
3.12
100
K/W
K/W
1
CS684 TO3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
Collector cut-off current
-ICEO
-IEBO
-VCE(SAT)
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
hFE
DC Current Gain
Mx Unit
IE=0 , -VCB= -VCEOMAX=140 V
IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150°C
IB=0 , -VCE= -1/2VCEOMAX=70 V
IC=0, -VEB=5 V
-
-
0,2
1
0,2
5
mA
mA
-IC=1.5 A, -IB=6 mA
-
-
2
V
750
10
-
2000
750
60
1,5
2,5
-
V
kHz
V
0,8
-
-
A
-
0,8
4,5
2
8
µs
-VCE=3 V, -IC=500 mA
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=4 A
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=1,5 A, f= 1 MHz
-VCE=3 V, -IC=1,5 A
IF=1,5 A
-VCE=50 V, tP= 20ms,non rep., without
heatsink
-VBE
hfe
fhfe
VF
Min Typ
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
-I(SB)
collector current
Turn-on time
ton
-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V
Turn-off time
toff
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
COMSET SEMICONDUCTORS
2
mA