DYNEX DCR3790B42

DCR3790B42
Phase Control Thyristor
Preliminary Information
DS5809-1.2 May 2009 (LN26739)
FEATURES
KEY PARAMETERS
Double Side Cooling
High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
4200V
3790A
53500A
1500V/µs
400A/µs
* Higher dV/dt selections available
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR3790B42
DCR3790B40
DCR3790B35
DCR3790B30
Repetitive Peak
Voltages
VDRM and VRRM
V
4200
4000
3500
3000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 200mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: B
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3790B42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR3790B42
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
3790
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
5953
A
Continuous (direct) on-state current
-
5330
A
IT
Half wave resistive load
SURGE RATINGS
Parameter
Symbol
ITSM
2
It
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
53.5
kA
VR = 0
14.31
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Double side cooled
DC
-
0.007
°C/W
Single side cooled
Anode DC
-
0.0116
°C/W
Cathode DC
-
0.0181
°C/W
Clamping force 70.0kN
Double side
-
0.0014
°C/W
(with mounting compound)
Single side
-
0.0028
°C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
63.0
77.0
kN
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DCR3790B42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
200
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
400
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
700A to 4100A at Tcase = 125°C
-
0.83
V
Threshold voltage – High level
4100A to 12000A at Tcase = 125°C
-
1.0
V
On-state slope resistance – Low level
700A to 4100A at Tcase = 125°C
-
0.1688
m
On-state slope resistance – High level
4100A to 12000A at Tcase = 125°C
-
0.1263
m
TBD
TBD
µs
250
500
µs
1500
4500
µC
Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR3790B42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
Instantaneous on-state current IT - (A)
7000
min 125°C
max 125°C
min 25°C
max 25°C
6000
5000
4000
3000
2000
1000
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.348967
B = 0.066851
C = 0.000102
D = 0.003788
these values are valid for Tj = 125°C for IT 500A to 10000A
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DCR3790B42
SEMICONDUCTOR
130
10
120
Mean power dissipation - (kW)
o
Maximum case temperature, T case ( C )
11
9
8
7
6
5
4
180
3
120
90
2
60
1
30
120
110
90
100
60
90
30
80
70
60
50
40
30
20
10
0
0
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
110
120
12
90
11
90
100
60
30
80
70
60
50
40
30
20
10
Mean power dissipation - (kW)
120
Heatsink -
130
Maximum heatsink temperature, T
( oC )
180
10
9
8
7
d.c.
6
180
5
120
4
90
3
60
2
30
1
0
0
0
1000 2000 3000 4000 5000 6000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000 2000 3000 4000 5000 6000 7000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR3790B42
130
130
Maximum heatsik temperature T heatsink - (oC)
Maximum permissible case temperature , Tcase - (°C)
SEMICONDUCTOR
d.c.
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
0
d.c.
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1000 2000 3000 4000 5000 6000 7000
0
Mean on-state current, IT(AV) - (A)
1000 2000 3000 4000 5000 6000 7000
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
20
Thermal Impedance, Zth(j-c) ( °C/kW)
18
16
Double Side Cooling
Double side cooled
Anode Side Cooling
Anode side cooled
Ti (s)
Cathode side cooled
Zth = [Ri x ( 1-exp. (t/ti))]
12
3
2.9559
0.0137081
0.0548877
0.3311925
1.6905
1.3035
3.138
1.1859
5.9136
0.0251065
0.2410256
1.0806
11.002
1.2616
2.6216
13.3603
0.8304
0.0245837
0.2005035
5.7854
16.765
Ri (°C/kW)
Ti (s)
14
2
1.333
Ri (°C/kW)
Ti (s)
Cathode Sided Cooling
1
0.502
Ri (°C/kW)
4
2.2335
[1]
10
Rth(j-c) Conduction
8
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
6
Double side cooling
Zth (z)
4
2
0
0.001
0.01
0.1
1
10
100
°
180
120
90
60
30
15
sine.
0.70
0.80
0.90
1.00
1.07
1.10
rect.
0.48
0.68
0.78
0.89
1.01
1.07
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
0.67
0.77
0.87
0.95
1.02
1.05
rect.
0.47
0.66
0.75
0.86
0.96
1.02
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
0.67
0.77
0.87
0.95
1.02
1.05
rect.
0.47
0.66
0.76
0.86
0.96
1.02
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR3790B42
SEMICONDUCTOR
150
45
100
ITSM
100
30
50
15
I2t (MA2s)
Surge current, I TSM - (kA)
Surge current, ITSM- (kA)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
2
It
0
10
1
10
1
100
0
100
10
Pulse width, tP - (ms)
Number of cycles
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
30000
800
Max QS = 5404.7*(di/dt)0.4733
Conditions:
Tj = 125ºC, VRpeak ~ 2500V,
VRM ~ 1700V
snubber as required to control
reverse voltages
700
Reverse recovery current, IRR - (A)
25000
Stored Charge, QS - (uC)
Conditions:
Tcase= 125°C
VR = 0
half-sine w ave
20000
Min QS = 2246.2*(di/dt)0.5657
15000
10000
Conditions:
Tj = 125ºC, VRpeak ~ 2500V,
VRM ~ 1700V
snubber as required to control reverse
voltages
5000
600
IRR max = 62.4*(di/dt)0.7284
500
400
300
0.8041
IRR min = 36.417*(di/dt)
200
100
0
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current
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DCR3790B42
SEMICONDUCTOR
10
9
Pulse
Width us
100
200
500
1000
10000
Gate trigger voltage, VGT - (V)
8
7
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Upper Limit
6
5
Preferred gate drive area
4
3
2
o
1
Tj = -40oC
Tj = 25oC
Lower Limit
Tj = 125 C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR3790B42
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Device
DCR5050B22
DCR4590B28
DCR3790B42
DCR3480B52
DCR2880B65
DCR2400B85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
34.565
34.115
34.64
34.19
34.87
34.42
34.99
34.54
35.25
34.8
35.61
35.16
Ø120.0 MAX.
Ø84.6 NOM.
Ø1.5
CATHODE
GATE
ANODE
Ø84.6 NOM.
FOR PACKAGE HEIGHT SEE
TABLE
Clamping force: 76kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: B
Fig.16 Package outline
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DCR3790B42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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