DCR4500A42 Phase Control Thyristor Preliminary Information DS5942-1.0 June 2009 (LN 26810) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR4500A42* DCR4500A40 DCR4500A36 Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3600 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. o o *4100V @ -40 C, 4200V @ 0 C Outline type code: A (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR4500A42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 4500 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 7068 A Continuous (direct) on-state current - 6330 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 60.8 kA VR = 0 18.48 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.00603 °C/W Single side cooled Anode DC - 0.01024 °C/W Cathode DC - 0.01467 °C/W Clamping force 83.0kN Double side - 0.001 °C/W (with mounting compound) Single side - 0.002 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 74.0 91.0 kN 2/10 www.dynexsemi.com DYNAMIC CHARACTERISTICS Parameter Symbol IRRM/IDRM Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 500 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500 to 2200A at Tcase = 125°C - 0.75 V Threshold voltage – High level 2200 to 8000A at Tcase = 125°C - 0.92 V On-state slope resistance – Low level 500A to 2200A at Tcase = 125°C - 0.205 m On-state slope resistance – High level 2200A to 8000A at Tcase = 125°C - 0.122 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 900 µs 2920 4875 µC 42 57 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time IT = 5000A, Tj = 125°C, VR = 200V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~2500V, VR ~ 1700V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 9000 Vtm Vtm Vtm Vtm 7000 max 125ºC min 125ºC max 25ºC min 25ºC Instantaneous on-state current I F - (A) 8000 6000 5000 4000 3000 2000 1000 0 0.5 1 1.5 2 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = -0.208640 B = 0.171688 C = 0.000113 D = 0.003842 these values are valid for Tj = 125°C for IT 500A to 8000A 4/10 www.dynexsemi.com 130 10 180 120 90 60 30 ( oC ) case Maximum case temperature, T Mean power dissipation - (kW) 8 180 120 90 60 30 120 6 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) 0 2000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 16 180 120 90 60 30 100 d.c. 180 120 90 60 30 14 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( ° C) 125 75 50 25 12 10 8 6 4 2 0 0 0 0 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR 125 Maximum heatsink temperature T heatsink -(o C) Maximum permissible case temperature , T case -(° C) 125 100 75 50 d.c. 180 120 90 60 30 25 0 100 75 50 d.c. 180 120 90 60 30 25 0 0 1000 2000 3000 4000 5000 0 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Transient Thermal Impedance - Zth (°C/kW) Double side cooled 14 Anode side cooled Anode side cooled Cathode side cooled Cathode side cooled 12 Ti (s) Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 0.08069 i 1 8 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. 6 Double side cooling Zth (z) ° sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 4 2 0 0.001 Ri (°C/kW) Z th [ Ri (1 exp(T / Ti )] i 4 10 5000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled 16 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 0.01 0.1 1 10 Anode Side Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60 100 Time (s) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com 200 30 180 27 100 10 Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 24 2 It 140 120 18 100 15 80 12 ITSM 60 9 Conditions: Tcase= 125°C VR = 0 half-sine wave 40 20 1 21 6 3 0 1 10 100 I2t (MA2s) Surge current, ITSM - (kA) Surge current, I TSM- (kA) 160 1 0 100 10 Number of cycles Pulse width, tP - (ms) Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 25000 700 Qs max = 4874.7*(di/dt) 0.4822 IRR max = 57.242*(di/dt)0.7466 600 Reverse recovery current, IRR - (A) Stored charge, Qs - (uC) 20000 15000 10000 Qs min = 2920.8*(di/dt) 0.581 Conditions: Tj = 125ºC, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage 5000 500 400 300 IRR min = 41.99*(di/dt)0.7893 Conditions: Tj = 125ºC, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage 200 100 0 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.16 Package outline 9/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com