HTF12A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F █ General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 █ Absolute Maximum Ratings（Ta=25℃） 3 Tstg——Storage Temperature………………………………………………………………… -40~125℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Tc=79℃）………………………………………………… 12A VGM——Peak Gate Voltage…………………………………………………………………………… 10V IGM——Peak Gate Current…………………………………………………………………………… 2.0A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 119/130A VISO——Isolation Breakdown Voltage（R.M.S，A.C.1minute）………………………………………1500V █ Electrical Characteristics（Ta=25℃） Symbol Items Min Max Unit Conditions VD=VDRM,Single Phase,Half IDRM Repetitive Peak Off-State Current 2.0 mA VTM Peak On-State Voltage 1.4 V I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD=6V, RL=10 ohm I-GT1 Gate Trigger Current（Ⅱ） 30 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD=6V, RL=10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD=6V, RL=10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD=6V, RL=10 ohm V-GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD=6V, RL=10 ohm VGD Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current 0.2 V TJ=125℃,VD=1/2VDRM 10 V/µS (dv/dt)c IH Rth(j-c) Thermal Resistance 20 Wave, TJ=125℃ IT=20A, Inst. Measurement TJ=125℃,VD=2/3VDRM (di/dt)c=-6A/ms mA 3.3 ℃/W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HTF12A60 Shantou Huashan Electronic Devices Co.,Ltd. HTF12A60