SEMIWELL STR2A60

STR2A60
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
▼▲
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1.5 A )
◆ High Commutation dv/dt
◆
○
◆
1.T1
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static
switching relay.
Symbol
Parameter
Condition
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 116 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
t =10ms
PGM
PG(AV)
○
3
2
1
( TJ = 25°C unless otherwise specified )
VDRM
I2 t
3.Gate
TO-126
General Description
Absolute Maximum Ratings
2.T2
Peak Gate Power Dissipation
Average Gate Power Dissipation
Over any 20ms period
Ratings
Units
600
V
1.5
A
13/15
A
0.5
A2 s
1.0
W
0.1
W
IGM
Peak Gate Current
0.5
A
VGM
Peak Gate Voltage
6.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TJ
TSTG
Oct, 2003. Rev. 3
1/5
[email protected] Semiconductor Co., Ltd., All rights reserved.
STR2A60
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
0.5
mA
VTM
Peak On-State Voltage
IT = 2.1 A, Inst. Measurement
─
─
1.6
V
─
─
20
─
─
20
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
20
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -0.75 A/ms,
VD=2/3 VDRM
5.0
─
─
V/㎲
─
5
─
mA
─
─
3.5
°C/W
Holding Current
Thermal Impedance
Junction to case
STR2A60
Fig 1. Gate Characteristics
10
Fig 2. On-State Voltage
1
1
10
VGK = 6V
10
On-State Current [A]
25℃
PG(AV) = 0.1W
0
IGM=500mA
Gate Voltage [V]
PGK = 1W
o
125 C
0
10
o
25 C
VGD = 0.2V
10
-1
-1
10
10
1
10
2
10
0.5
3
1.0
1.5
2.0
Gate Current [mA]
3.0
4.0
4.5
5.0
θ = 180
2π
θ
2.1
360°
θ
: Conduction Angle
o
o
π
2.4
θ
Allowable Case Temperature [ C]
Power Dissipation [W]
3.5
127.5
2.7
θ = 150
o
θ = 120
o
θ = 90
o
θ = 60
o
θ = 30
o
1.5
1.2
0.9
0.6
125.0
122.5
π
120.0
0.3
0.6
0.9
1.2
1.5
θ = 30
2π
360°
117.5
θ
115.0
0.0
1.8
θ
θ
0.3
0.0
0.0
3.0
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
1.8
2.5
On-State Voltage [V]
: Conduction Angle
0.2
0.4
0.6
RMS On-State Current [A]
o
θ = 60
o
θ = 90
o
θ = 120
o
θ = 150
o
θ = 180
0.8
1.0
1.2
1.4
1.6
o
1.8
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
16
10
12
o
8
50Hz
6
V
+
V
-
V
o
10
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
14
GT1
GT1
GT3
1
4
2
0
0
10
10
1
Time (cycles)
10
2
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
STR2A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
IGT (25 C)
o
IGT (t C)
o
Transient Thermal Impedance [ C/W]
10
1
0.1
-50
0
50
I
+
I
-
I
-
GT1
GT1
GT3
100
150
1
10
-2
10
-1
10
0
10
1
Time (sec)
o
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/5
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
10
2
STR2A60
TO-126 Package Dimension
mm
Dim.
Min.
A
Inch
Typ.
7.5
Max.
Min.
7.9
0.295
Typ.
Max.
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
F
0.150
2.5
G
0.098
1.2
1.5
0.047
0.059
H
2.3
0.091
I
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
φ
3.2
0.126
D
A
E
B
φ
G
F
L
3
2
C
1. Gate
2. T2
3. T1
1
J
K
H
I
5/5