PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation (PT=450mW) • High hFE and good linearity • Complementary to PJ2N9015 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (T a= 25 °C ) Rating Symbol Value Uint Collector Base Voltage Collector Emitter Voltage VCBO VCEO 50 45 V V Emitter Base Voltage VEBO 5 V Collector Current Ic 100 mA Collector Dissipation Pc 450 mW Junction Temperature Tj Storage Temperature Tstg P in : 1. Emitter 2. Base 3. Collector ORDERING INFORMATION Device PJ2N9014CT PJ2N9014CX °C 150 °C -55 ~150 P in : 1. Base 2.Emitter 3.Collector Operating Temperature -20℃～+85℃ Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (T a= 25 °C ) Characte ristic Symbol Te st Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= 100μA , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC= 1mA , IB=0 45 V Emitter-Base Breakdown Voltage BVEBO IE =100μA , IC=0 5 V Collector Cut-off Current ICBO VCB= 50V , IE = 0 50 nA Emitter Cut-off Current IEBO VEB= 5V , IC=0 50 nA DC Current Gain hFE VEB= 5V, IC =1 mA 60 280 1000 Collector- Base Saturation Voltage VCE(sat) IC= 100 mA , IB=5mA 0.14 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC= 100mA , IB=5mA 0.84 1.0 V Base-Emitter On Voltage VBE(ON) VCE =5V, Ic =2 mA 0.63 0.7 V 2.2 3.5 pF Output Capacitance C ob 0.58 VCB =10V, IE =0 f=1MHz Current Gain Bandwidth Produce fT VCE =5V, Ic =10 mA Noise Figure NF VCE =5V, Ic =0.2 mA 150 270 0.9 MHz 10 f=1KHz,Rs=2KΩ hEF CLASSIFICATION Classification A B C D HFE 60-150 100-300 200-600 400-1000 1-3 2002/01.rev.A dB PJ2N9014 NPN Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9014 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A