SS9014 NPN Epitaxial Silicon Transistor

LESHAN RADIO COMPANY, LTD.
NPN Epitaxial Silicon
Transistor
L9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to L9015
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
45
V
Emitter-Base Voltage
5
IC
V
Collector Current
100
mA
PC
Collector Power Dissipation
450
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC =100µA, IE =0
Min.
50
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC =1mA, IB =0
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE =100µA, IC =0
5
V
ICBO
Collector Cut-off Current
VCB =50V, IE =0
50
nA
IEBO
Emitter Cut-off Current
VEB =5V, IC =0
50
nA
hFE
DC Current Gain
VCE =5V, IC =1mA
280
1000
VCE (sat)
Collector-Base Saturation Voltage
IC =100mA, IB =5mA
60
0.14
0.3
VBE (sat)
Base-Emitter Saturation Voltage
IC =100mA, IB =5mA
0.84
1.0
VBE (on)
Base-Emitter On Voltage
VCE =5V, IC =2mA
0.63
0.7
V
Cob
Output Capacitance
VCB =10V, IE =0
f=1MHz
2.2
3.5
pF
fT
Current Gain Bandwidth Product
VCE =5V, IC =10mA
NF
Noise Figure
VCE =5V, IC =0.2mA
f=1KHz, RS=2KΩ
0.58
150
V
270
0.9
MHz
10
dB
hFE Classification
Classification
A
B
C
D
hFE
60 ~ 150
100 ~ 300
200 ~ 600
400 ~ 1000
L9014-1/2
LESHAN RADIO COMPANY, LTD.
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
L9014-2/2