Inchange Semiconductor Product Specification 2N5741 2N5742 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCEO VEBO Collector-base voltage EMIC GE S 2N5741 VCBO N A H INC OND Open emitter 2N5742 2N5741 Collector-emitter voltage R O T UC VALUE -60 V -100 -60 Open base 2N5742 Emitter-base voltage UNIT V -100 Open collector -5 V -20 A 65 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5741 2N5742 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5741 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 V 2N5742 -100 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-4A -3.0 V Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-10A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ -0.5 -5.0 mA -1.0 mA VBEsat IEBO 导体 半 电 固 Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain fT M E S GE N A H INC Transition frequency R O T UC D N O IC VEB=-5V; IC=0 IC=-10A ; VCE=-5V 20 IC=-20A ; VCE=-5V 10 IC=-1A ; VCE=-10V 10 2 80 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3