ISC 2SA1290

Inchange Semiconductor
Product Specification
2SA1290
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Short switching time
·Low collector saturation voltage
·Complement to type 2SC3254
APPLICATIONS
·Various inductance lamp drivers for
electrical equipment
·Inverters,converters
·Power amplifier
·Switching regulator ,driver
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1290
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,RBE=∞
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-7
V
Collector-emitter saturation voltage
IC=-3.5A; IB=-0.175A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
70
MAX
UNIT
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
VCC=-20V; IC=-3A
IB1=-IB2=-0.15A;RL=6.67Ω
Fall time
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SA1290
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SA1290
Silicon PNP Power Transistors
4