ISC 2SD1235

Inchange Semiconductor
Product Specification
2SD1235
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB919
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
8
A
ICM
Collector current-peak
15
A
PC
Collector dissipation
TC=25℃
30
W
1.75
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1235
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
30
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=3A; IB=0.15A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=4A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
120
MHz
0.1
μs
0.5
μs
0.03
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=20IB1=-20IB2=4A
VCC=10V,RL=2.5Ω
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SD1235
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
Inchange Semiconductor
Product Specification
2SD1235
Silicon NPN Power Transistors
4