Inchange Semiconductor Product Specification 2SA1469 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3746 ·Low saturation voltage ·Excellent current dependence of hFE ·Short switching time APPLICATIONS ·Various inductance of lamp drivers for electrical equipment ·Inverters ,converters ·Power amplification ·Switching regulator ,driver PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-peak -7 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1469 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-10mA ;IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-2.5A IB=-0.125A -0.4 V ICBO Collector cut-off current VCB=-40V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-2.0A;IB1=-IB2=-0.1A VCC=20V ,RL=10Ω hFE Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SA1469 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1469 Silicon PNP Power Transistors 4