ISC 2SA958

Inchange Semiconductor
Product Specification
2SA957 2SA958
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·For general purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA957
VCBO
Collector-base voltage
-150
Open base
2SA958
VEBO
Emitter-base voltage
V
-200
2SA957
Collector-emitter voltage
UNIT
-150
Open emitter
2SA958
VCEO
VALUE
V
-200
Open collector
-6
V
IC
Collector current
-2.0
A
IB
Base current
-1.0
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA957 2SA958
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA957
VCEO(BR)
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage
UNIT
V
-200
IC=-0.7A; IB=-0.07A
-1.5
V
-100
μA
-1.0
mA
VCB=-150V; IE=0
Collector
cut-off current
2SA958
VCB=-200V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-0.7A ; VCE=-10V
Transition frequency
IC=-0.2A ; VCE=-12V
fT
MAX
IC=-25mA ,IB=0
2SA957
ICBO
TYP.
-150
2SA958
VCEsat
MIN
40
20
MHz
0.4
μs
1.5
μs
0.5
μs
Switching times resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC=-1.0A IB1=- IB2=-0.1A
RL=20Ω;VCC=-20V
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA957 2SA958
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3