Inchange Semiconductor Product Specification 2SB674 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -7 A -0.2 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SB674 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA, IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ,IB=-14mA -1.3 -2.0 V Base-emitter saturation voltage IC=-3A ,IB=-6mA -1.55 -2.5 V ICBO Collector cut-off current VCB=-80V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 VBEsat CONDITIONS MIN TYP. MAX -80 B B B UNIT V 15000 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-6mA VCC=-45V,RL=15Ω Fall time 2 0.8 μs 2.0 μs 2.5 μs Inchange Semiconductor Product Specification 2SB674 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3