ISC 2SC1046

Inchange Semiconductor
Product Specification
2SC1046
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For CRT horizontal output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
6
V
3
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-40~125
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1046
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
1000
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=2 A;IB=0.4A
2.0
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V;IC=0
10
μA
hFE
DC current gain
IC=2 A ; VCE=5V
VCEsat
CONDITIONS
2
MIN
4
TYP.
MAX
20
UNIT
Inchange Semiconductor
Product Specification
2SC1046
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3